2026 A 1.8-kV Normally-Off Al-rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure
본문
- Author
- Jaejin Heo, Joocheol Jeong, Shyam Mohan, Hyogeun Cho, Okhyun Nam, Sakhone Pharkphoumy, and Hyun-seop Kim
- Journal
- IEEE Transactions on Electron Devices
- Vol./ Page
- Vol. 73, No. 8, pp. 5288-5292
- DOI
- DOI: 10.1109/TED.2026.3708421
- Year
- 2026
- Link
- https://ieeexplore.ieee.org/document/11602584 86회 연결