Publication

Power Semiconductor Device Technology and Reliability

2024 Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

본문

Author
Hyun-Seop Kim, Aditya K. Bhat, Matthew D. Smith, Martin Kuball
Journal
IEEE Transactions on Electron Devices
Vol./ Page
Vol. 71, No. 6, pp. 3609-3613
DOI
DOI: 10.1109/TED.2024.3393941
Year
2024