"Temperature Dependence of On-Resistance Components in Recessed p-Channel GaN MOSFETs"

Seung-Su Kim, Hyun-Seop Kim, Ho-Young Cha Solid-State Electronics, Vol. 238, p. 109407 DOI: 10.1016/j.sse.2026.109407

"Multi-Criteria Reliability Qualification on Laser Micro-Dissimilar Welding of Ultra-Thin Flexible Flat Cu Cable onto Uncoated Aluminum alloy Busbar for EV Cell Sensing"

Hyunjong Yoo, Doyun Ahn, Minseok Lee, Donghyun Kim, Dongil Lee, Eunho Kim, Ik-Seon Kwon, Hyun-Seop Kim, Geum-Su Yeom, Jihun Kim, Hee-Shin Kang, Junsu Park International Journal of Precision Engineering and Manufacturing, Vol. xx, No. xx, pp. xxx-xxx DOI: 10.1007/s12541-026-01596-4

"A 1.8-kV Normally-Off Al-rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure"

Jaejin Heo, Joocheol Jeong, Shyam Mohan, Hyogeun Cho, Okhyun Nam, Sakhone Pharkphoumy, and Hyun-seop Kim IEEE Transactions on Electron Devices, Vol. 73, No. 8, pp. 5288-5292 DOI: 10.1109/TED.2026.3708421

"Dynamic RON in Short-Loop Processed AlGaN/GaN Devices: Impact of Layer Thickness"

Hyun-Seop Kim, Michael J. Uren, Chaowang Liu, Andrew Withey, Robert Harper, Sam Evans, Martin Kuball IEEE Transactions on Electron Devices, Vol. 73, No. 7, pp. 3942-3948 DOI: 10.1109/TED.2026.3689087

"Stable High-Temperature Operation of Ultra-Wide Bandgap Al-rich AlGaN HFET"

Do-Hyeong Yeo, Hyun-Seop Kim, Ho-Young Cha Semiconductor Science and Technology, Vol. 41, No. 2, p. 025022 DOI: 10.1088/1361-6641/ae4534

"P-GaN/AlGaN/GaN E-Mode HEMT with Extended MOS Gate"

Min-Keun Lee, Gökhan Atmaca, Myeong-Su Chae, Hyungtak Kim, Hyun-Seop Kim, Ho-Young Cha Electronics Letters, Vol. 61, No. 1, p. e70475 DOI: 10.1049/ell2.70475

"p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC"

Hee-Jae Oh, Dong-Ik Oh, Hyun-Seop Kim, Ho-Young Cha Journal of Semiconductor Technology and Science, Vol. 25, No. 2, pp. 128-133 DOI: 10.5573/JSTS.2025.25.2.128

"Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process"

Yeo-Reum Yang, Jun-Hyeok Yim, Hyun-Seop Kim, Ho-Young Cha Materials Science in Semiconductor Processing, Vol. 179, p. 108483 DOI: 10.1016/j.mssp.2024.108483

"Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations"

Hyun-Seop Kim, Aditya K. Bhat, Matthew D. Smith, Martin Kuball IEEE Transactions on Electron Devices, Vol. 71, No. 6, pp. 3609-3613 DOI: 10.1109/TED.2024.3393941