Power semiconductors based on wide bandgap (WBG) materials such as Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Oxide (Ga₂O₃), and others are receiving significant attention due to their superior performance compared to traditional silicon-based semiconductors. WBG materials exhibit higher breakdown voltage, better thermal conductivity, and lower on-resistance, making them ideal for high-power and high-efficiency applications. Research in this area focuses on investigating novel device structures and fabrication techniques to fully harness the advantages of WBG materials for more efficient and compact power electronic systems.