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Kunsan National University

Power Semiconductor Device
Technology and Reliability
Laboratory

국립군산대학교 전력 반도체 소자 및 신뢰성 연구실

Research Topic

  • topic 01 01

    Power
    Semiconductors

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  • topic 02 02

    Semiconductor Device
    Reliability

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  • topic 03 03

    Extreme Environment
    Electronics

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News

Publication

  • 2026

    Multi-Criteria Reliability Qualification on Laser Micro-Dissimilar Welding of Ultra-Thin Flexible Flat Cu Cable onto Uncoated Aluminum alloy Busbar for EV Cell Sensing

    Hyunjong Yoo, Doyun Ahn, Minseok Lee, Donghyun Kim, Dongil Lee, Eunho Kim, Ik-Seon Kwon, Hyun-Seop Kim, Geum-Su Yeom, Jihun Kim, Hee-Shin Kang, Junsu Park, International Journal of Precision Engineering and Manufacturing, Vol. xx, No. xx, pp. xxx-xxx, DOI: 10.1007/s12541-026-01596-4

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  • 2026

    A 1.8-kV Normally-Off Al-rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure

    Jaejin Heo, Joocheol Jeong, Shyam Mohan, Hyogeun Cho, Okhyun Nam, Sakhone Pharkphoumy, and Hyun-seop Kim, IEEE Transactions on Electron Devices, Vol. xx, No. xx, pp. xxx-xxx (Early Access), DOI: 10.1109/TED.2026.3708421

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  • 2026

    Dynamic RON in Short-Loop Processed AlGaN/GaN Devices: Impact of Layer Thickness

    Hyun-Seop Kim, Michael J. Uren, Chaowang Liu, Andrew Withey, Robert Harper, Sam Evans, Martin Kuball, IEEE Transactions on Electron Devices, Vol. 73, No. 3, pp. 3942-3948, DOI: 10.1109/TED.2026.3689087

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  • 2026

    Stable High-Temperature Operation of Ultra-Wide Bandgap Al-rich AlGaN HFET

    Do-Hyeong Yeo, Hyun-Seop Kim, Ho-Young Cha, Semiconductor Science and Technology, Vol. 41, No. 2, p. 025022, DOI: 10.1088/1361-6641/ae4534

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  • 2025

    P-GaN/AlGaN/GaN E-Mode HEMT with Extended MOS Gate

    Min-Keun Lee, Gökhan Atmaca, Myeong-Su Chae, Hyungtak Kim, Hyun-Seop Kim, Ho-Young Cha, Electronics Letters, Vol. 61, No. 1, p. e70475, DOI: 10.1049/ell2.70475

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  • 2025

    p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC

    Hee-Jae Oh, Dong-Ik Oh, Hyun-Seop Kim, Ho-Young Cha, Journal of Semiconductor Technology and Science, Vol. 25, No. 2, pp. 128-133, DOI: 10.5573/JSTS.2025.25.2.128

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  • 2024

    Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process

    Yeo-Reum Yang, Jun-Hyeok Yim, Hyun-Seop Kim, Ho-Young Cha, Materials Science in Semiconductor Processing, Vol. 179, p. 108483, DOI: 10.1016/j.mssp.2024.108483

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  • 2024

    Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

    Hyun-Seop Kim, Aditya K. Bhat, Matthew D. Smith, Martin Kuball, IEEE Transactions on Electron Devices, Vol. 71, No. 6, pp. 3609-3613, DOI: 10.1109/TED.2024.3393941

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