Kunsan National University
Power Semiconductor Device
Technology and Reliability
Laboratory
국립군산대학교 전력 반도체 소자 및 신뢰성 연구실
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2026
Multi-Criteria Reliability Qualification on Laser Micro-Dissimilar Welding of Ultra-Thin Flexible Flat Cu Cable onto Uncoated Aluminum alloy Busbar for EV Cell Sensing
Hyunjong Yoo, Doyun Ahn, Minseok Lee, Donghyun Kim, Dongil Lee, Eunho Kim, Ik-Seon Kwon, Hyun-Seop Kim, Geum-Su Yeom, Jihun Kim, Hee-Shin Kang, Junsu Park, International Journal of Precision Engineering and Manufacturing, Vol. xx, No. xx, pp. xxx-xxx, DOI: 10.1007/s12541-026-01596-4MORE
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2026
A 1.8-kV Normally-Off Al-rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure
Jaejin Heo, Joocheol Jeong, Shyam Mohan, Hyogeun Cho, Okhyun Nam, Sakhone Pharkphoumy, and Hyun-seop Kim, IEEE Transactions on Electron Devices, Vol. xx, No. xx, pp. xxx-xxx (Early Access), DOI: 10.1109/TED.2026.3708421MORE
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2026
Dynamic RON in Short-Loop Processed AlGaN/GaN Devices: Impact of Layer Thickness
Hyun-Seop Kim, Michael J. Uren, Chaowang Liu, Andrew Withey, Robert Harper, Sam Evans, Martin Kuball, IEEE Transactions on Electron Devices, Vol. 73, No. 3, pp. 3942-3948, DOI: 10.1109/TED.2026.3689087MORE
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2026
Stable High-Temperature Operation of Ultra-Wide Bandgap Al-rich AlGaN HFET
Do-Hyeong Yeo, Hyun-Seop Kim, Ho-Young Cha, Semiconductor Science and Technology, Vol. 41, No. 2, p. 025022, DOI: 10.1088/1361-6641/ae4534MORE
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2025
P-GaN/AlGaN/GaN E-Mode HEMT with Extended MOS Gate
Min-Keun Lee, Gökhan Atmaca, Myeong-Su Chae, Hyungtak Kim, Hyun-Seop Kim, Ho-Young Cha, Electronics Letters, Vol. 61, No. 1, p. e70475, DOI: 10.1049/ell2.70475MORE
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2025
p-GaN/AlGaN/GaN Micro-LED Integrated with Monolithic Driving IC
Hee-Jae Oh, Dong-Ik Oh, Hyun-Seop Kim, Ho-Young Cha, Journal of Semiconductor Technology and Science, Vol. 25, No. 2, pp. 128-133, DOI: 10.5573/JSTS.2025.25.2.128MORE
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2024
Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process
Yeo-Reum Yang, Jun-Hyeok Yim, Hyun-Seop Kim, Ho-Young Cha, Materials Science in Semiconductor Processing, Vol. 179, p. 108483, DOI: 10.1016/j.mssp.2024.108483MORE
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2024
Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations
Hyun-Seop Kim, Aditya K. Bhat, Matthew D. Smith, Martin Kuball, IEEE Transactions on Electron Devices, Vol. 71, No. 6, pp. 3609-3613, DOI: 10.1109/TED.2024.3393941MORE
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